Improvement of Crystal Quality of GaN Grown on AlN Template by MOCVD Using HT‐AlN Interlayer [phys. Status Solidi C 6, No. S2, S317–S320 (2009)]
Physica status solidi C, Conferences and critical reviews/Physica status solidi C, Current topics in solid state physics(2009)
摘要
AbstractIn the PDF file of the paper by Y. B. Tao et al. [Phys. Status Solidi C 6, S317 (2009)], published online 7 May 2009, a wrong image was loaded: in place of Fig. 2, inadvertently Fig. 1 was shown again. This Erratum displays Figs. 1 and 2 properly. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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