Improvement of Crystal Quality of GaN Grown on AlN Template by MOCVD Using HT‐AlN Interlayer [phys. Status Solidi C 6, No. S2, S317–S320 (2009)]

Tao Yuebin, Chen Zhizhong, Yang Zhijian, Sang Liwen, Chen Zhitao, Li Ding, Fang Hao, Pan Yaobo, Yan Jianfeng, Zhu Guangmin, Chen Cheng, Li Shitao, Hao Maosheng, Zhang Guoyi

Physica status solidi C, Conferences and critical reviews/Physica status solidi C, Current topics in solid state physics（2009）

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摘要

AbstractIn the PDF file of the paper by Y. B. Tao et al. [Phys. Status Solidi C 6, S317 (2009)], published online 7 May 2009, a wrong image was loaded: in place of Fig. 2, inadvertently Fig. 1 was shown again. This Erratum displays Figs. 1 and 2 properly. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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