PZT薄膜的制备及特性
Journal of Shanghai Normal University(Natural Sciences)（2007）
Abstract
用电子束蒸发法在n-Si(100)衬底上制备了Pb(Zr_(0.52)Ti_(0.48))O_3(PZT)多晶薄膜,研究了薄膜的表面形貌、结晶特性、红外吸收特性随生长温度和退火温度的变化关系,发现较高的生长温度有利于(101)方向晶粒的择优生长,较高的退火温度能促进(101)方向的晶粒向(110)方向的晶粒转变,(110)择优方向的薄膜对长红外波段的吸收比(101)择优方向的薄膜明显增强。
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Key words
morphology,X-ray diffraction,SEM,preferred orientation,PZT
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