Microwave performances of silicon heterostructure-FETs

We present the state of the art of microwave performances of silicon heterostructures FETs (hetero-FETs). Recent advances are illustrated on using DaimlerChrysler (DC) technologies. fMAX as high as 188 and 135GHz with minimum noise figure, NFmin as low as 0.3 and 0.5dB at 2.5GHz are reported, respectively, for n- and p-MODFET with gatelength from 100 to 130nm. Experimental data and physical simulations of optimized structures show that fMAX of 70nm gatelength n-MODFET could reach 360GHz.