Improved Electrical Properties of InN by High-Temperature Annealing withIn SituCapped SiN_xLayers

We have carried out the annealing of InN epilayers grown by molecular beam epitaxy and capped with in situ deposited SiNx in vacuum at 450-650degreesC. With the increase in annealing temperature, the crystallinity and carrier mobility of the InN layer clearly improved, and the residual carrier concentration of the layer decreased. Annealing without the SiNx capping layer increased the number of defects and carrier concentration, probably due to the formation of N vacancies and O incorporation.