Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET.

The multibranch mobility analysis is used for the detailed characterization of the carrier mobility in SOI-MOSFETs. This technique shows the actual mobility dependence on the effective field in the device, allowing the separation of the contributions of the carriers located at the front- and backinterfaces. Measurements indicate that the mobility increases in thin and thick-BOX transistors when a back-gate bias is applied. The results demonstrate the impact of the distributions of carriers and electric field in the transistor body.