Rapid thermal annealing of indium-implanted gallium arsenide

oion implantation may be the most useful method. Ion irradiation not only reproducibly forms thin (tens of A) layers at a specified depth but also creates systems of ternary solutions of various compositions and concentrations of the components by varying the implantation conditions and the implanted ion species. Meanwhile, it is known that ion irradiation processes are accompanied by generation of radiation-induced defects and, as a result, by substantial lattice disorder. A necessary step of semiconductor structure production by ion implantation is post-implantation annealing. Heat treatment is needed to restore the disordered crystalline structure and to create conditions for entry of implanted ions into the GaAs lattice. Among the variety of post-implantation treatments, rapid thermal annealing (1-100 sec) is intermediate in duration between conventional thermal and pulse methods. It is in rapid thermal annealing that a time-temperature interval is found in which restoration of the structure of damaged layers is almost complete, redistribution of the implanted dopant is least, and the electric activation level of the dopant reaches or exceeds the equilibrium solubility limit. In this study the rapid thermal annealing of crystalline GaAs implanted by indium was investigated by Raman spectroscopy.