Structural and optical properties of InAlN/GaN distributed Bragg reflectors

S. O. Usov,E. E. Zavarin,A. F. Tsatsul’nikov,V. V. Lundin,A. V. Sakharov,A. E. Nikolaev,M. A. Sinitsyn,N. V. Kryzhanovskaya,S. I. Troshkov,N. N. Ledentsov

Semiconductors（2010）

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摘要

Structural and optical properties of InAlN/GaN distributed Bragg reflectors grown by MOCVD on sapphire substrates are studied. The influence of growth conditions and thicknesses of the InAlN layers on structural properties of distributed Bragg reflectors is studied. It is shown that optimization of the conditions of epitaxial growth makes it possible to design InAlN/GaN distributed Bragg reflectors with a reflectance of more than 99% and a reflection maximum in the wavelength range of 460–610 nm.

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关键词

Reflection Spectrum,Epitaxial Growth,Scanning Electron Micro,Distribute Bragg Reflector,Monosilane

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