Characterization of polymeric light emitting diodes by SIMS depth profiling analysis

SIMS depth profiling experiments have been used to elucidate the layered structure, the impurity distribution, and current induced changes in polymeric light emitting diodes (LEDs). In the first investigated system (ITO/PPV/Al), a poly-p-phenylene-vinylene (PPV) layer has been deposited onto an indium/tin oxide (ITO) glass support, and covered by an aluminium top electrode. A well defined aluminium oxide interlayer has been found in between the polymer and the Al overlayer. Furthermore, an enrichment of chlorine has been detected at both electrode-polymer interfaces, a residue from the polymer preparation process. This observation points to a chemical reaction between the electrodes and elimination products that are liberated during the thermal decomposition of the polymer precursor. In the second system, three different polymeric layers have been spin-coated onto an ITO substrate, i.e. a pure poly-methylphenylsilane (PMPS) layer, a second PMPS layer doped with an organic dye, and finally a polystyrene (PS) layer containing an oxadiazole derivative. By the addition of a bromine containing label into the first layer, it can be shown that the two PMPS layers have been diffusing into each other, whereas the PMPS and the PS regions have remained well separated. As found with the single layer devices, the formation of an interfacial oxide layer between the PS layer and the Al top electrode has been observed. Investigations of driven multilayer LEDs have provided evidence for drastic current-induced degradation effects.