The Effect of Active Delay Element Resistance on Limiting Heavy Ion SEU Upset Cross-Sections of SOI ADE/SRAMs

This paper discusses the effective limiting heavy-ion induced single-event upset cross section of radiation-hardened 150 nm SOI SRAM and the resistance of the active-delay element (ADE) used in the memory cell. The effective limiting upset cross-section of ADE/SRAM is found to be proportional to the product of the limiting upset cross-section of the 6T SRAM of the same CMOS technology and a dimens...