High Magnetic Field Sensor Using Lasb2

The magnetotransport properties of single crystals of the highly anisotropic layered metal LaSb2 are reported in magnetic fields up to 45 T with fields oriented both parallel and perpendicular to the layers. Below 10 K the perpendicular magnetoresistance of LaSb2 becomes temperature independent and is characterized by a 100-fold linear increase in resistance between 0 and 45 T with no evidence of quantum oscillations down to 50 mK. The Hall resistivity is hole-like and gives a high field carrier density of n similar to 3x10(20) cm(-3). The feasibility of using LaSb2 for magnetic field sensors is discussed. (C) 2003 American Institute of Physics.