Flip Chip Power Mosfet: A New Wafer Scale Packaging Technique

This paper describes the first flip chip power MOSFET device with the lowest R-DSON per footprint area in the industry. This device, with the same electrical characteristics as an SO8 packaged device, takes only 30% of the SO8 footprint. R-Si x Footprint Area as low as 59 mOhm.mm(2) were achieved for bi-directional device and 98 mOhm.mm(2) for single device at 4.5 V-GS, a 4-6 times reduction compared to regular packaged MOSFET. The typical applications for these parts include battery charging and load switching in cell phones and laptops.