Progress in gallium nitride-based bipolar transistors

Xing, H.,D. S. Green,McCarthy, L.,I. P. Smorchkova,P. Chavarkar,T. Mates,S. Keller,S. DenBaars,J. Speck,Umesh K. Mishra

Minneapolis, MN（2001）

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摘要

An overview is presented of progress in (Al,Ga)N-based bipolar transistors along with recent work at UCSB. Current gains at 300 K of 10 in GaN BJTs and up to 35 in AlGaN/GaN HBTs respectively are reported. Critical issues involved in p-GaN growth and the device fabrication are addressed

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关键词

III-V semiconductors,aluminium compounds,gallium compounds,heterojunction bipolar transistors,molecular beam epitaxial growth,power bipolar transistors,reviews,semiconductor device breakdown,semiconductor growth,vapour phase epitaxial growth,wide band gap semiconductors,300 K,AlGaN-GaN,AlGaN-based bipolar transistors,AlGaN/GaN HBTs,GaN BJTs,GaN based bipolar transistors,GaN:Mg,MBE,MOCVD,Mg-doped GaN,device fabrication,high breakdown voltage,p-GaN growth,p-type GaN,regrown base,regrown emitter

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