Bipolar Resistive Switching In Cr-Doped Tiox Thin Films
CHINESE PHYSICS B（2011）
Abstract
The electric-pulse-induced resistive switching effect is studied for Ti0.85Cr0.15Ox (TCO) films grown on Ir-Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse-induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.
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Key words
resistive random-access memory (RRAM), electrical-pulse-induced resistive (EPIR)
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