405 nm Laser Thermal Lithography of 40 nm Pattern Using Super Resolution Organic Resist Material

We have developed a high resolution resist for laser thermal lithography and a fabrication method for this resist. We designed a resist material which has specific desired properties. We aimed to raise the gasification temperature and achieve a sharply peaked temperature profile so that holes are formed only in the center of the laser spot. We were able to perform lithography with a half pitch of 40 nm. Furthermore, using the result of this lithography as a dry etching mask, we were able to perform dry etching on a number of materials, including SiO(2) and sapphire. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.126502