Neutron scattering measurements of interdiffusion in amorphous Si/Ge multilayers

Multilayered amorphous Si/amorphous Ge films with a periodicity of 80 to 100 A have been obtained using UHV evaporation techniques. The interdiffusion coefficient D~ of this system was determined by measuring the intensity of the neutron (000) forward scattering satellites arising from the modulation, as a function of annealing temperature and time. The temperature dependence of D~ in the range 620-710 K is described by D~=6.34×10 −3 exp (−2.35 eV/kT) cm 2 s −1 Preparation de structures multicouches en evaporant successivement des couches minces de Si et Ge amorphes, avec des periodes de 80 a 100 A. Determination du coefficient d'interdiffusion par mesure de l'intensite des reflexions satellites d'un faisceau de neutrons liees a la modulation periodique du contraste, en fonction de la temperature et de la duree du recuit