InP DHBT selector-driver with 2×2.7 V swing for 100 Gbit/s operation

A. Konczykowska,J.-Y. Dupuy,F. Jorge,M. Riet,J. Moulu,J. Godin

Electronics Letters（2009）

引用 11|浏览25

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摘要

An integrated selector-driver is designed for 100 Gbit/s operation and fabricated using 0.7 mum InP double-heterojunction bipolar transistor (DHBT) technology. The driver has a lumped architecture and operates in differential mode. Two complementary signals each with 2.7 V amplitude (3.2 Vpp) have been measured at 100 Gbit/s.

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关键词

driver circuits,heterojunction bipolar transistors,III-V semiconductors,indium,integrated circuit design,phosphorus compounds

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