用于脉冲γ强度测量的φ60,1000 μm PIN探测器
Acta Physica Sinica(2007)
Abstract
采用电阻率为10000-20000Ω·cm 的高阻单晶硅材料,研制成功灵敏区尺寸为φ60 mm,耗尽层厚度~1000 μm的大面积厚PIN半导体探测器.设计了该类探测器厚度测量专用的反冲质子测量系统,对探测器的时间响应、γ灵敏度、漏电流、γ/n分辨等物理参数进行了测量和分析,结果表明,这类探测器可满足低强度裂变n/γ混合场中脉冲γ强度测量的需要.
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Key words
semiconductor detector,large area PIN detector,current mode
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