Electromigration in Double-Layer Metallization

Tetsuaki Wada,Hiromu Higuchi,Tsuneo Ajiki

IEEE Transactions on Reliability（1985）

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摘要

The electromigration of the top stripe in aluminum double-layer metallization systems was investigated. The current density dependence and the activation energy characterization are important in double-layer metallization. The step-coverage and coating effects of SiN is better than that of Si02. New phenomena associated with electromigration have been observed as follows: 1. The mean lifetime is a...

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关键词

Electromigration,Metallization,Circuit testing,Stress,Conducting materials,Dielectric materials,Microelectronics,System testing,Aluminum,Current density

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