Synthesis of Aluminum-Oxide Thin-Films by Ion-Beam and Vapor-Deposition Technology

Aluminum oxide films were prepared by evaporation of aluminum and simultaneous bombardment by oxygen ions in the energy region 2–20 keV with the aluminum/oxygen transport ratio in the range 0.5–10. The films were formed at room temperature on substrates of Si(100) wafers. Infrared absorption spectra indicated that the structure of the films was α-type and/or γ-type, and X-ray photoelectron spectra show that the phase structure was determined by both the Al/O transport ratio and the energy of the oxygen ion beams. As a result of the study of the crystalline growth of the films, the X-ray diffraction pattern of the film prepared by 20 keV oxygen ions and a transport ratio of 2.45 showed a peak due to the γ-Al2O3 crystal.