Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n⁺-Source

We have demonstrated an InP/InGaAs composite-channel metal-oxide-semiconductor field-effect transistor with a selectively regrown n(+)-InGaAs source/drain formed by metal organic vapor-phase epitaxy. A 150-nm-long channel was fabricated using a dummy gate and by laterally buried regrowth in the channel undercut. The gate stack was formed after regrowth by replacing the dummy gate. The carrier density of the regrown layer was 4.9 x 10(19) cm(-3). The maximum drain current at a drain voltage V-d = 1 V and a gate voltage V-g = 3 V was 0.93 mA/mu m and the maximum transconductance was 0.53 mS/mu m at V-d = 0.65 V. (C) 2010 The Japan Society of Applied Physics