InAs/InP(100) quantum dot laser with high wavelength stability

S. G. Li,Gong, Q.,Y. F. Lao,Y. G. Zhang,S. L. Feng,H. L. Wang

Electronics Letters（2010）

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摘要

InAs/InP(100) quantum dot lasers with lasing wavelength insensitive to operation temperature are demonstrated. Very high wavelength stability of 0.088 nm/K in the temperature range 80-310 K is obtained, which is 6.2 times lower than that of the reference quantum well laser.

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关键词

III-V semiconductors,indium compounds,laser frequency stability,quantum dot lasers,InAs-InP,high wavelength stability,lasing wavelength,operation temperature,quantum dot laser,temperature 80 K to 310 K

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