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Development of N-on-p Silicon Sensors for Very High Radiation Environments

Y. Unno,A. A. Affolder,P. P. Allport,R. Bates,C. Betancourt,J. Bohm,H. Brown,C. Buttar,J. R. Carter,G. Casse,H. Chen,A. Chilingarov,V. Cindro,A. Clark,N. Dawson,B. DeWilde,Z. Dolezal,L. Eklund,V. Fadeyev,D. Ferrere,H. Fox,R. French,C. Garcia,M. Gerling,S. Gonzalez Sevilla,I. Gorelov,A. Greenall,A. A. Grillo,N. Hamasaki,K. Hara,H. Hatano,M. Hoeferkamp,L. B. A. Hommels,Y. Ikegami,K. Jakobs,S. Kamada,J. Kierstead,P. Kodys,M. Kohler,T. Kohriki,G. Kramberger,C. Lacasta,Z. Li,S. Lindgren,D. Lynn,M. Mikestikova,P. Maddock,I. Mandic,S. Marti i Garcia,F. martinez-McKinney,R. Maunu,R. McCarthy,J. Metcalfe,M. Mikuz,M. Minano,S. Mitsui,V. O'Shea,S. Paganis,U. Parzefall,D. Puldon,D. Robinson,H. F. -W. Sadrozinski,S. Sattari,D. Schamberger,S. Seidel,A. Seiden,S. Terada,K. Toms,D. Tsionou,J. Von Wilpert,M. Wormald,J. Wright,M. Yamada,K. Yamamura

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment（2010）

Cited 84|Views45
Key words
Silicon,Sensor,Microstrip,p-type,n-in-p,ATLAS,SLHC,Radiation damage
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