Radiation Hard Nano-FET based Biosensor

A new nano transistor based biosensor has been developed which has the potential to detect pathogens and thus protect crew safety aboard long term manned flight programs. This work outlines structures which compose the biosensor and demonstrates that the nano transistors utilized herein are total dose radiation hard. The Nano Field Effect Transistors (FET) were designed and fabricated with doped semiconductor nanowires (30nm-100nm) on silicon/silicon dioxide wafers. Sizing was varied to optimize the best feature size for stable outputs. The polyimide coated nano-FET surfaces were covalently modified with a specific antibody, or an in-lab synthesized specific peptide nucleic acid (PNA). When the targeted DNA or bio-agent was captured, the constant overall impedance increased or decreased depending on the electronic charge of target molecule. Current data indicates that the nano- FET can form the basis of a robust, very sensitive hand held tool for bio-threat and clinical detection. In view of the potential space applications, the nano FETs were radiation tested at the Idaho Accelerator Center, which is operated by Idaho State University.