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Investigations into the growth of AIN by MOCVD using trimethylsilylazide as nitrogen source

John Auld,David J. Houlton,Anthony C. Jones,Simon A. Rushworth,Gary W. Critchlow

JOURNAL OF MATERIALS CHEMISTRY（1994）

Cited 20|Views13
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Abstract
Thin films of AlN have been deposited by atmospheric-pressure MOCVD using trimethylaluminium (Me3Al) and trimethylsilylazide (Me3SiN3) as precursors. The films were deposited at 300 or 450-degrees-C and had growth rates of up to 3 mum h-1
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nitrogen
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