Microstructures of GaAs fabricated by finely focused ion beam lithography

Microstructures of fine line and dot patterns on GaAs are fabricated by Be++ fine focused ion beam lithography and chlorine reactive ion etching using electron beam excited plasma. Microstructures with a vertical side wall of fine line and dot in fabricated GaAs have 40 nm width with a high aspect ratio of about 17 and 80 nm dot diameter with a high aspect ratio of about 8. It is found that the process has a high potential for microstructure fabrication in several tenth nanometer regions.