The Si surface yield as a calibration standard for RBS

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS(2000)

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摘要
The Rutherford backscattering spectroscopy (RBS) surface height of a pure bulk material can be used as an absolute standard Value to calibrate the detector solid angle. This work presents the results of an international collaboration started at the beginning of 1998 to define the surface height of the RES spectrum (H-0) of Si, amorphized by ion implantation to avoid channeling. The analyses were performed with 1-3 MeV He beams and 170 degrees scattering angle. The detector solid angle was estimated in the different laboratories either by geometrical measurement or by a calibrated standard. The agreement of the experimental Ho Values is of the order +/-2%, the claimed accuracy for RES. The results are also consistent at 2% level with both the stopping power measurements of Konac et al. (1998), and the measurements of Lennard et al. (1999). (C) 2000 Elsevier Science B.V. All rights reserved.
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关键词
Rutherford backscattering spectrometry,calibration standards,stopping power,silicon
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