Direct observation of LPE heterogrowth of GaAs on a GaP substrate
Journal of Crystal Growth(2000)
摘要
In order to observe the early stage of GaAs growth on a GaP substrate, a liquid-phase epitaxial (LPE) growth system with a long distance microscope was constructed. Successive photographs of growing GaAs islands within 3min after starting the growth are presented.
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关键词
07.60.P,81.10.D,81.30
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