Integrated heterostructure devices composed of II–VI materials with Hg-based contact layers

Integrated heterostructure devices (IHDs) composed of II–VI materials in epitaxial multilayered structures for light-emitting diode and laser diode applications are described. These IHDs combine a light emission multilayer structure with an abrupt or graded heterostructure which includes Hg-based materials for improved ohmic contact to the upper p-type layer of the light emitting structure.