Crystal growth of selected II–VI semiconducting alloys by directional solidification: Part I Ground-based experiments

Journal of Materials Science(1997)

Cited 1|Views3
No score
Abstract
A series of Hg 0.84 Zn 0.16 Te crystal ingots have been grown from pseudobinary melts by the Bridgmam–Stockbarger type directional solidification using a Marshall Space Flight Center/Space Science Laboratory heat-pipe furnace and the ground control experiment laboratory furnace of the crystal growth furnace which was flown on the first United States Microgravity Mission. A number of translation rates and a series of hot- and cold-zone temperatures were employed to assess the influence of growth parameters on the crystal properties for the purpose of optimizing the in-flight growth conditions.
More
Translated text
Key words
ZnTe,HgTe,Translation Rate,Interface Shape,Radial Temperature Gradient
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined