Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

The effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of samples with (0001) (000-1) and (11-20) oriented SiC substrates were used to fabricate the MOSFETs, with a gate oxide process consisting of a low-temperature deposited oxide followed by NO anneal at 1175 degrees C for 2hrs. Various device parameters, particularly threshold voltage, subthreshold slope. field-effect mobility. inversion sheet carrier concentration and Hall mobility have been extracted. Temperature characterization up to 225 degrees C was also performed.