Relaxation and diffusion study by small angle neutron scattering technique in amorphous semiconductor superlattices

Superlattices consisting of alternating layers of amorphous silicon and germanium have been studied using small angle scattering techniques with cold neutrons. From the behviour of the (000) forward scattering satellite during thermal treatment it has been possible to analyse structural relaxation in the system in terms of bulk compaction through the enhanced mobility of the interstitial-like defect. Real diffusion was not observed under the experimental conditions.