Structural characterization of LPOMVPE grown AlAs/GaAs multilayers
Journal of Crystal Growth(1999)
摘要
The characterization of the AlAs\GaAs multilayers based on the modelling of the X-ray scattering is discussed. The structural parameters regarding the thickness of the bilayer components and the vertical and lateral variations (interface roughness) were assessed from low and high angle scan modes. The diffuse scattering analysis showed that both lateral and vertical correlation of the interface roughness develops in this LPOMVPE grown system.
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