Space Charge Waves in 6H-SiC and 4H-SiC

A. A. Lebedev,M. Lemmer,B. Hilling,M. Wohlecke,Mirco Imlau,V. V. Bryksin,M. Petrov

Materials Science Forum（2009）

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摘要

Resonant excitation of space charge waves (SCW) by means of an oscillating light pattern has been investigated in hexagonal silicon carbide with 4H and 6H stacking sequence. The experimental data can be explained by the existence of trap recharging waves in the 4H-SiC sample and damped forced charge-density waves in the 6H-SiC sample.

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关键词

Space charge waves,SiC polytypes,optic of semiconductors

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