Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation method

Defects in quenched p-type silicon were investigated by perturbed angular correlation spectroscopy using indium-cadmium probe atoms. Three different probe-defect configurations were observed with axial symmetry along a 〈111〉 direction which are characterized by the interaction frequencies vQ = 236,332 and 407 MHz respectively. The formation, dynamics and stability of the complexes were studied. These defects are identical to those produced by chemomechanical wafer polishing.