Silicon-On-Diamond layer integration by wafer bonding technology

M. Rabarot,J. Widiez,S. Saada,J.-P. Mazellier,C. Lecouvey,J.-C. Roussin,J. Dechamp,P. Bergonzo,F. Andrieu,O. Faynot,S. Deleonibus,L. Clavelier,J.P. Roger

Diamond and Related Materials（2010）

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摘要

In this study, Silicon-On-Diamond (SOD) micro-structures have been fabricated using either Smart Cut™ or bonded and Etched-Back Silicon On Insulator (BESOI) technology. Thanks to the development of an innovative smoothening process, polycrystalline diamond layers (C*) can be integrated as a buried oxide layer offering new opportunities in terms of thermal management.

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关键词

SOD,Diamond wafer bonding,DPE,Smoothening diamond process

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