A 0.13 $\mu{\hbox {m}}$ $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
IEEE Journal of Solid-State Circuits（2010）
Abstract
A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies fT of 240 GHz, maximum oscillation frequencies fmax of 330 GHz, and breakdown voltages BVCEO of 1.7 V along with high-voltage HBTs (fT = 50 GHz,fmax = 130 GHz, BVCEO = 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate dela...
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Key words
Heterojunction bipolar transistors,Logic gates,Silicon germanium,Delay,CMOS integrated circuits,BiCMOS integrated circuits,Ring oscillators
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