Electron Tunnelling In Cdte/Cdmnte Double Barrier Structures
JOURNAL OF CRYSTAL GROWTH(1996)
摘要
Pump and probe nonlinear transmission experiments with femtosecond resolution are used to investigate electron tunnelling between the central CdMnTe well and the outer CdTe wells of a CdTe/CdMnTe double barrier structure. The time dependence of the reduction in oscillator strength resulting from bandfilling at the exciton resonance is used to measure population changes in the outer wells. A tunnelling time of 8 ps is measured when a carrier density of 1 x 10(13) cm(-2) is used. Monte Carlo simulations show that the timescale of tunnelling via LO phonon scattering is 10 ps. A pump induced increase in absorption at energies smaller than that of the exciton resonance is observed at early times and assigned to band-gap renormalisation.
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关键词
electron,structures
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