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Anisotropy Of The Quantum-Confined Stark Effect In A Single Inas Quantum Dot

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3(2006)

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摘要
The quantum-confined Stark effect in a single InAs quantum dot has been studied in a novel device geometry, where both in-plane and perpendicular electric fields, E-parallel to and E-perpendicular to, can be applied. The shift in the photoluminescence energy from the exciton ground state of the dot has been studied as functions of applied bias voltages, V-parallel to and V-perpendicular to, and found to be quite anisotropic. Possible origins of the observed anisotropy are discussed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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关键词
electric field,quantum dot,quantum confined stark effect,ground state
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