Non-equilibrium charge carrier dynamics in synthetic diamond studied by the μSR-method

Polarized negative muons were used to study the dynamics of non-equilibrium charge carriers in diamond. From the behavior of the muon polarization it is concluded that the acceptor center μB in diamond is formed in the diamagnetic state (with the probability close to unity) and then, by capturing a hole, turns to the paramagnetic state. The hole capture rate by an ionized acceptor center μB− in synthetic diamond was found to depend on temperature as 1/Tα, where α=(1.5–2.5) at T>80 K.