Spectroscopic study of Si-related defects in nonhomogeneous GaAs: Si

Si-related defects in highly doped GaAs: Si crystals were studied by localized vibrational-mode spectroscopy, room-temperature luminescence topography and low-temperature luminescence. While the total concentration of Si across the sample was found practically constant, the distribution of different Si defects was nonhomogeneous and reflected the shape of the liquid-solid interface during crystallization.