A Solar Cell Based on sp2 Carbonaceous Film/n-Type Silicon Heterojunction

A solar cell with carbonaceous thin film/n-type silicon (Gin-Si) was fabricated utilizing a process in which an sp(2) arranged carbonaceous thin film was deposited on an n-type silicon substrate by chemical vapor deposition of 2,5-dimethyl-p-benzoquinone at 500 degrees C. The C/n-Si solar cell has a hetero-type junction with a junction barrier of 0.54 eV and a depletion layer of 1.1 mu m in thickness at zero bias. Under simulated light of 15 mW . cm(-2), the C/n-Si cell gives an energy conversion efficiency of 6.45% and an intrinsic energy conversion efficiency of about 13%.