Analysis Of Surface Structures Through Determination Of Their Composition Using Stm: Si(100)4x3-In And Si(111)4x1-In Reconstructions

The advantages of scanning tunneling microscopy for the determination of the composition of the submonolayer metal/silicon interfaces has been demonstrated using Si(100)4x3-In and Si(111)4x1-In as sample reconstructions. It has been found that the Si(100)4x3-In unit cell is built of 7 In atoms and 6 Si atoms. while the Si(111)4x1-In unit cell contains 3 In atoms and 2 Si atoms in addition to the top Si(111) bilayer. The obtained quantitative information provides the ground for discussion of the plausible atomic arrangement of these reconstructions. [S0163-1829(99)00744-4].