In-line characterization of dielectric constant and leakage currents of low-k films with corona charge method

D. Fossati, C. Beitia,L. Plantier, G. Imbert, S. Passefort, M. Desbois,F. Volpi,J.-C. Royer

Journal of Materials Science: Materials in Electronics(2007)

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摘要
The use of corona charge method for monitoring the electrical properties of low-k dielectrics is investigated in this paper. First, the stability and reproducibility of k measurements are demonstrated on SiO 2 -based low-k materials. As mercury probe is the reference tool for k and leakage measurements, a comparison of the dielectric constants and leakage currents between both techniques is carried out on a set of different low-k films with various dielectric constants and thicknesses. Good correlations (over 95%) were obtained for the k values and breakdown voltages on all studied layers and an 82% correlation has been obtained for leakage densities at 1 MV/cm. As a consequence, corona charge method seems to be a good alternative for mercury probe to monitor in-line back-end low-k films.
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关键词
Dielectric Constant,Leakage Current,Breakdown Voltage,Plasma Enhance Chemical Vapor Deposition,Metal Insulator Semiconductor
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