A Constant-Mobility Method to Enable MOSFET Series-Resistance Extraction
IEEE Electron Device Letters(2007)
摘要
A new method of extracting the MOSFET series resistance is proposed. This method requires only simple dc measurements on a single test device. Experimental demonstration is presented, without requiring quantities such as gate-oxide thickness, physical gate length, or effective channel length. The merit of the method stems from the specifically arranged bias conditions in which the channel carrier ...
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关键词
MOSFET circuits,Electric resistance,Equivalent circuits,Degradation,Semiconductor device manufacture,Circuit testing,Silicon,Channel bank filters,Threshold voltage,Electrical resistance measurement
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