Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes

Ning Duan,S. Wang,X. G. Zheng,X. Li,Ning Li,J. C. Campbell,Chad Wang,L. A. Coldren

IEEE Journal of Quantum Electronics（2005）

引用 38|浏览22

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摘要

It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche photodiodes is critical to achieve low excess noise and high gain bandwidth product.

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关键词

Impact ionization,Absorption,Frequency response,Avalanche photodiodes,Indium compounds,Indium gallium arsenide,Optical noise,Silicon,Bandwidth,Indium phosphide

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