High external differential efficiency and high optical gain of long-wavelength quantum dot diode laser

A.E Zhukov,A.R Kovsh,S.S Mikhrin,A.P Vasil'ev,E.S Semenova,N.A Maleev,V.M Ustinov,M.M Kulagina,E.V Nikitina,I.P Soshnikov,Yu.M Shernyakov,D.A Livshits,N.V Kryjanovskaya,D.S Sizov,M.V Maximov,A.F Tsatsul'nikov,N.N Ledentsov,D Bimberg,Zh.I Alferov

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES（2003）

Cited 30|Views23

No score

Abstract

Long-wavelength (1.29 mum) lasers grown on GaAs and based on several planes of self-organized quantum dots in an external quantum well demonstrate significant improvement of the external differential efficiency (88%) and the characteristic temperature (150 K). This is due to suppression of carrier pile-up in the waveguide region in combination with extended range of optical loss in which the ground-state lasing survives. (C) 2002 Elsevier Science B.V. All rights reserved.

Translated text

Key words

quantum dots,diode lasers,differential efficiency

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined