Investigation On Silicon On Insulator Fabricated By Separation By Implanted Oxygen Layer Transfer

In this paper, two approaches combining the separation by implanted oxygen layer transfer (SLT) process with Si epitaxy are proposed to fabricate a silicon-on-insulator (SOI) wafer. Spectroscopic ellipsometry indicates that SOI wafers with the top Si layers of 1491.46 +/- 14.9 and 1476.44 +/- 18.5 nm are obtained. Defect-free top Si as well as atomic-scale sharp top Si/buried oxide interfaces are observed by transmission electron microscopy, indicating a high crystal quality and a perfect structure of the SLT SOI wafers. Using atomic force microscopy, the surface and top Si/buried oxide interface morphology of the SLT SOI wafers is also investigated. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3253571] All rights reserved.