P-39: A Flexible 16kb SRAM based on Low-Temperature Poly-Silicon (LTPS) TFT Technology
Sid Symposium Digest of Technical Papers（2006）
Abstract
A flexible 16kb SRAM based on low-temperature poly-silicon LTPS) TFT technology and surface-free technology by laser annealing/ablation (SUFTLA®) is presented. The chip consists of approximately 110,000 transistors and occupies an area of about 90mm2 (10.8mm × 8.3mm). The read access time is 650ns at 3.0V and 200ns at 6.0V.
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Key words
tft technology,low-temperature,poly-silicon
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