The crystallization of Bi in the annealed a-Ge/Bi bilayer and its effect on conductivity

In this paper, the crystallization behaviors and transport properties are investigated for a-Ge/Bi bilayers annealed at different temperatures. For 200 nm/100 nm bilayers, it is found that the orientations of Bi in the bilayers annealed at 200°C and 340°C are preferred, as well as the original one. But they are random when the bilayers are annealed at temperatures between 240°C and 300°C. For 200 nm/50 nm bilayers, the orientations of Bi are always preferred. Corresponding to the orientations mentioned above, the minimum on the R(300 K)-Ta curve appears only in the case of 200 nm/100 nm bilayers.