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MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating disk

G.S. Tompa,T. Salagaj,L. Cook,R.A. Stall,C.R. Nelson,P.L. Anderson,W.H. Wright,W.L. Ahlgren, S.M. Johnson

Journal of Crystal Growth（1991）

Cited 19|Views4
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Abstract
A variety of II–VI compounds, (Hg, Cd, Zn), (Se, Te), have been grown in a vertical MOVPE reactor which incorporates a horizontal wafer carrier which is rotated at high speeds. We report here on the growth system and the materials results.
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Microcavity
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